| 摘要 |
With a semiconductor device using a phase change material, in particular, an increase in the number of circuit elements associated with a testing function is checked to the minimum, and an easier test on the semiconductor device is implemented. When a retention test and so forth are conducted on a phase change element, for example, a generated voltage VS 1 of a set bit-line voltage power supply, VG_set, provided originally for use in a set operation, is used as a voltage to be applied to the phase change element, and timing when the voltage VS 1 is applied to the phase change element is generated by a read/test timing generation circuit TG_rd_test, provided originally to execute a read operation of the phase change element. By so doing, it becomes possible to check an increase in the number of circuit elements, and to conduct the retention test accelerated on a voltage basis with ease.
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