| 摘要 |
A solid-state image sensor capable of suppressing blooming and increase of a dark current also when an n-type impurity concentration in a transfer channel region is increased is obtained. In this solid-state image sensor, gate electrodes of a prescribed pixel and another pixel adjacent to the prescribed pixel are provided at a first space, and a larger quantity of second conductivity type impurity is introduced into a region of a first conductivity type transfer channel region, located on the main surface of a substrate, corresponding to the first space as compared with a second conductivity type impurity contained in the remaining region of the transfer channel region other than the region corresponding to the first space.
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