| 摘要 |
A nonvolatile semiconductor memory includes a memory cell array including horizontally aligned memory cell columns, each including vertically arranged memory cell transistors and select transistors selecting the memory cell transistors; first cell well lines connecting well regions in which the memory cell columns are formed; second cell well lines arranged in an interconnect layer above the first cell well lines and connecting the first cell well lines to one another electrically; and a cell source line connecting source terminals of the select transistors in each memory cell column.
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