| 摘要 |
The object of designing a magneto resistive memory such that it is as resistant as possible to magnetic stray fields, offers a longest possible retention time of the information stored, and ensures a good read signal, which is achieved by the MRAM memory cells comprising a first ferromagnetic layer or reference layer, a second ferromagnetic layer or reference layer adapted to be magnetized by an external magnetic field, and a non-magnetic or non-magnetizable intermediate layer positioned between the first and second ferromagnetic layers, wherein a ferrimagnetic assistant layer is at least partially adjacently positioned at the ferromagnetic memory layer of the MRAM memory cells, and is adapted to be mechanically coupled therewith. The present invention offers higher stability and longer retention of the information stored, and thus an improvement of the read out signal. |
