Testing a photolithographic imaging mechanism relating to generation of scattered light used in manufacture of microelectronic circuits, involves using measuring and neighboring structures formed on photomask to evaluate scattered light

摘要

The method involves forming test structures (2) on a photomask (1), in which each test structure comprises of measuring structures (21) with neighboring structures (22). The measuring structures and neighboring structures are formed using photoresist that influences the scattered light generated by a photolithographic imaging mechanism. The CD (critical dimension) measurements of the measuring structures are determined. The measured CDs are then evaluated as a function of the neighboring structures to evaluate the generated scattered light : An independent claim is included for the photomask used in testing the pholithographic imaging mechanism.