METHOD FOR GENERATING MASK PATTERN DATA/MASK INSPECTION DATA, AND METHOD FOR MANUFACTURING/INSPECTING PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing/inspecting a photomask by which the defect detection sensitivity can be enhanced.

SOLUTION: The method includes steps of: preparing design data of a semiconductor device; preparing lithography conditions relating to the lithography process for transferring a mask pattern formed in a photomask onto a wafer and wafer process conditions relating to processing the wafer using the pattern transferred onto the wafer; preparing a first proximity correction rule or a first proximity correction model to correct the proximity effect relating to the lithography conditions and the wafer process conditions; creating mask pattern data based on the design data and the first proximity correction rule or the first proximity correction model; and creating mask inspection data corresponding to the mask pattern data.

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