| 摘要 |
A high precision temperature detecting circuit is disclosed. The temperature detecting circuit includes a first voltage source circuit for generating a voltage VPN that has a negative temperature coefficient using a work function difference of gate electrodes of two field effect transistors, a second voltage source circuit for generating a reference voltage VREF 1 that is independent of temperature change using a work function difference of gate electrodes of two or more field effect transistors, an impedance conversion circuit for converting impedance of the voltage VPN and the reference voltage VREF 1 , and a subtracter circuit, to which the impedance converted voltages VPN and VREF 1 are provided, for obtaining a difference voltage between the voltage VPN and the reference voltage VREF 1 , and for amplifying the difference voltage.
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