| 摘要 |
A method of manufacturing a semiconductor memory according to the present invention includes steps of forming an insulating film, into which a conductive plug connected to a source or a drain in a transistor in a memory cell region and into which a first conductive layer which will become a part of a circuit in a peripheral circuit region are buried, on a semiconductor substrate, forming a first interlayer insulating film on the insulating film, forming, in the first interlayer insulating film, conductive plugs for connecting a first conductive layer and a second conductive layer arranged in a layer upper than the first interlayer insulating film, forming lower electrode of the capacitor in the first interlayer insulating film after the connection plugs are formed, forming capacitance insulating film, and forming upper electrode of the capacitor.
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