Novel organic zinc precursor and ZnO thin-film deposition by MOCVD

摘要

The present invention discloses an organic zinc precursor for depositing an zinc oxide layer on a substrate by metal organic chemical vapor deposition (MOCVD), which is a zinc-ligand complex having the following formula: wherein Y is O or NR⁷; R¹, R² and R³ independently are H, halogen, C_1-8 alkyl, C_1-8 haloalkyl, aryl or haloaryl; R⁴, R⁵ and R⁷ independently are C_1-8 alkyl, C_1-8 haloalkyl, aryl or haloaryl; R⁶ is H, halogen, C_1-8 alkyl or C_1-8 haloalkyl.