| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency semiconductor apparatus of which degradation in high frequency characteristics at a wire bonding connection is reduced when operation frequency rises, without causing impedance mismatching. <P>SOLUTION: The high frequency semiconductor apparatus comprises a high frequency semiconductor device 1 formed on a semiconductor substrate 8, a high frequency signal transmission line 7 whose one end is connected to the high frequency semiconductor device 1, a high frequency signal inputting/outputting pad 2 connected to the other end of high frequency signal transmission line 7 so as to be vertical to the extension direction of the high frequency signal transmission line 7, and ground potential pads 4 and 5 formed on each side in lengthwise direction of the high frequency signal inputting/outputting pad 2. A dimension W<SB>2</SB>in widthwise direction of the high frequency signal transmission line 7 is preferred to substantially agree with a dimension W<SB>1</SB>in widthwise direction of the high frequency signal inputting/outputting pad 2, and a plurality of gold wires 3 and 3' are preferred to be connected in the lengthwise direction of the high frequency signal inputting/outputting pad 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
