| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern inspection method, extracting an edge shape of a pattern from an image obtained by a scanning type microscope, and estimating the electric performance of a device from the extracted information to inspect the pattern. SOLUTION: In a control part 1611 and an inspecting computer 1612 of the scanning type microscope, the distribution of intensity of a reflected electron or a secondary electron 1609 is processed to obtain the distribution of a gate length in a single gate from the data of the edge position, estimate the transistor performance by looking upon a finally created transistor as the parallel connection of a plurality of transistors having various gate lengths, and determine the quality and grade of a pattern based on the estimation result, whereby the influence upon the device performance of an edge roughness can be estimated with high accuracy and quickly, so that according to the device specification, pattern inspection can be performed with high accuracy and efficiently. COPYRIGHT: (C)2006,JPO&NCIPI
|
