发明名称 Error reduction circuit for chalcogenide devices
摘要 An error reduction circuit for use in arrays of chalcogenide memory and computing devices. The error reduction circuit reduces the error associated with the output response of chalcogenide devices. In a preferred embodiment, the output response is resistance and the error reduction circuit reduces errors or fluctuations in the resistance. The error reduction circuit includes a network of chalcogenide devices, each of which is nominally equivalent and each of which is programmed into the same state having the same nominal resistance. The inclusion of multiple devices in the network of the instant error reduction circuit provides for a reduction in the contributions of both dynamic fluctuations and manufacturing fluctuations to the error in the output response.
申请公布号 US2006198186(A1) 申请公布日期 2006.09.07
申请号 US20050064637 申请日期 2005.02.24
申请人 OVSHINSKY STANFORD R;COHEN MORREL H 发明人 OVSHINSKY STANFORD R.;COHEN MORREL H.
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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