发明名称 |
MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY |
摘要 |
A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a maximum amount of capacitance per semiconductor die area.
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申请公布号 |
US2006198179(A1) |
申请公布日期 |
2006.09.07 |
申请号 |
US20060379441 |
申请日期 |
2006.04.20 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BAKER R. J.;BEIGEL KURT D. |
分类号 |
G11C11/22;G11C7/02;H01L21/02;H01L23/522;H01L27/02;H01L27/08 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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