发明名称 MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY
摘要 A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a maximum amount of capacitance per semiconductor die area.
申请公布号 US2006198179(A1) 申请公布日期 2006.09.07
申请号 US20060379441 申请日期 2006.04.20
申请人 MICRON TECHNOLOGY, INC. 发明人 BAKER R. J.;BEIGEL KURT D.
分类号 G11C11/22;G11C7/02;H01L21/02;H01L23/522;H01L27/02;H01L27/08 主分类号 G11C11/22
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