METHOD FOR MAKING MASK PATTERN, METHOD FOR MAKING LAYOUT, METHOD FOR MANUFACTURING PHOTOMASK, PHOTOMASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent pattern collapse of a line end portion or a defect pattern as a whole and to improve the process margin in lithography and the manufacturing yield of a device.

SOLUTION: The method for making a mask pattern comprises: recognizing a dummy pattern 51 which does not effect on device operation among design data of a semiconductor device corresponding to a pattern to be formed in a mask, extracting an end portion of the line or space constituting the recognized dummy pattern 51; and newly arranging a common dummy pattern 52 to connect the extracted end portion and a dummy pattern 51 adjacent to the end portion.

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