| 摘要 |
Etching is performed on an insulating layer 23 and a conductive layer 32 with a photoresist 41 as the mask, to form an opening 51 in the conductive layer 32 . After removing the photoresist 41 , another insulating layer 24 is formed all over, which is etched back so as to expose a surface of a conductive layer 31 , to thereby cover the inner wall of the opening 51 . Then etching is performed on the conductive layer 31 with the latter insulating layer 24 as the mask, so as to form another opening 52 in the conductive layer 31 . Then still another insulating layer 25 is formed all over, which is then etched back so as to expose a surface of the conductive layer 32 , to thereby fill the opening 52 with the last formed insulating layer 25.
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