| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a PRAM element having a structure lowering resetting current, and the method of manufacturing the same. <P>SOLUTION: The invention comprises a transistor and a data storage portion connected with the transistor. In a PRAM and the method of manufacturing the same, the data storage portion comprises an upper electrode, a lower electrode, and a porous phase change material layer which intervenes between the upper electrode and the lower electrode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
