| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing method for a crystal wafer end surface, which is excellent in working efficiency. SOLUTION: The processing method for the crystal wafer end surface, in which a plurality of crystal wafers are stuck and the end surfaces thereof are processed by using a brush polishing machine, comprises a step S101 of overlapping a plurality of the crystal wafers to be polished at the end surface and arranging them in a row, a step S102 of sticking crystal wafers with particulate containing wax, a step S103 of mounting a plurality of the stuck crystal wafers on the brush polishing machine, a step S104 of performing polishing of the wafer end surfaces using the brush polishing machine, and a step S105 of removing the particulate containing wax from the crystal wafer by heating. In this case, the mean particle diameter of the particulate in the particulate containing wax is 10 to 20μm, and the thickness of a particulate containing wax layer between the crystal wafers formed when crystal wafers are stuck to each other is set to be 20 to 30μm. COPYRIGHT: (C)2006,JPO&NCIPI |
