| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystal substrate which is more excellent in mass productivity than the conventional method by increasing the growing speed of the gallium nitride single crystal by MOCVD method. SOLUTION: When growing the gallium nitride single crystal by MOCVD method through supplying a group III material gas and a group V material gas simultaneously with a carrier gas onto a heated substrate and subjecting to a thermal decomposition reaction, the introduced amount of the group III material gas is set to 10-100 sccm, and the sum of the introduced amount of the carrier gas and the introduced amount of the group V material gas is set to 1,000 times or less of the introduced amount of the group III material gas. COPYRIGHT: (C)2006,JPO&NCIPI
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