发明名称 |
Manufacturing Method of Semiconductor Device |
摘要 |
The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.
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申请公布号 |
US2006199382(A1) |
申请公布日期 |
2006.09.07 |
申请号 |
US20060276349 |
申请日期 |
2006.02.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SUGIYAMA EIJI;DOZEN YOSHITAKA;FUKUMOTO YUMIKO;KUWABARA HIDEAKI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/44;H01L21/461 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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