Phase Shift Photomask and Method for Improving Printability of a Structure on a Wafer

摘要

A phase shift photomask and method for improving printability of a structure on a wafer are disclosed. The method includes providing a photomask including a zero degree PSW formed on a top surface of a substrate and a 180 degree PSW formed in a first region of the substrate. An orthogonal PSW that facilitates projection of an increased intensity of radiant energy through a second region of the substrate during a lithography process is formed in the second region between the zero degree PSW and the 180 degree PSW.