| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a new nitride semiconductor device of a group III-V with high breakdown voltage and low on-voltage. <P>SOLUTION: The nitride semiconductor device comprises: a first nitride semiconductor layer consisting of a group III-V nitride semiconductor laminated on a half-insulating or an insulating board; a second nitride semiconductor layer formed at a temperature lower than the first nitride semiconductor layer; a first anode electrode with a low Schottky barrier height which carries out a Schottky junction on the first nitride semiconductor layer exposed in a recess portion; a second anode electrode with a high Schottky barrier height which connects to the first anode electrode, consisting of the same material as that of the first anode electrode which carries out Schottky junction to the second nitride semiconductor layer, or a different metal; and a cathode electrode which performs an ohmic junction to the first or the second nitride semiconductor layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
