发明名称 |
Pyramid-shaped capacitor structure |
摘要 |
A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.
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申请公布号 |
US2006197091(A1) |
申请公布日期 |
2006.09.07 |
申请号 |
US20050252328 |
申请日期 |
2005.10.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG KUN-MING;WANG YJ;CHEN YING-DE;CHU EUGENE;CHEN FU-HSIN;WU TZU-YANG |
分类号 |
H01L27/108;H01L21/20;H01L21/8238;H01L21/8242;H01L29/786 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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