发明名称 Pyramid-shaped capacitor structure
摘要 A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.
申请公布号 US2006197091(A1) 申请公布日期 2006.09.07
申请号 US20050252328 申请日期 2005.10.17
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG KUN-MING;WANG YJ;CHEN YING-DE;CHU EUGENE;CHEN FU-HSIN;WU TZU-YANG
分类号 H01L27/108;H01L21/20;H01L21/8238;H01L21/8242;H01L29/786 主分类号 H01L27/108
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