| 摘要 |
A semiconductor device ( 20, 21, 22 ), including: a channel region ( 4 ) of a first conductivity type formed at a surface layer portion of a semiconductor substrate ( 1 ); a source region ( 25 ) of a second conductivity type which is different from the first conductivity type, the source region ( 25 ) being formed at a rim of a trench ( 17 ) having a depth sufficient to penetrate through the channel region ( 4 ); a drain region ( 2 ) of the second conductivity type formed at a region adjacent to a bottom of the trench ( 17 ); a gate insulating film ( 13 ) formed along an inner side wall of the trench ( 17 ); a gate electrode ( 26, 36 ) arranged in the trench ( 17 ) so as to be opposed to the channel region ( 4 ) with the gate insulating film ( 13 ) interposed therebetween; a conductive layer ( 37, 40, 40 a , 40 b) formed in the trench ( 17 ) so as to be nearer to the drain region ( 2 ) than the gate electrode ( 26, 36 ); and an insulating layer ( 15 ) surrounding the conductive layer ( 37, 40, 40 a , 40 b) to electrically insulate the conductive layer ( 37, 40, 40 a , 40 b) from the gate electrode ( 26, 36 ) and the drain region ( 2 ).
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