| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SEMICONDUCTOR LASER APPARATUS, OPTICAL TRANSMISSION MODULE AND OPTICAL DISK APPARATUS |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can reduce a manufacturing cost by improving a yield and to provide a semiconductor device, a semiconductor laser apparatus, an optical transmission module and an optical disk apparatus. SOLUTION: A p-Al<SB>0.5</SB>Ga<SB>0.5</SB>As second upper cladding layer 111' is formed on an n-GaAs substrate 101. An In<SB>0.25</SB>Ga<SB>0.75</SB>As<SB>0.54</SB>P<SB>0.46</SB>etching decelerating layer 112' having an etching rate being later than the etching rate of the p-Al<SB>0.5</SB>Ga<SB>0.5</SB>As second upper cladding layer 111' is formed on the p-Al<SB>0.5</SB>Ga<SB>0.5</SB>As second upper cladding layer 111'. A p<SP>++</SP>-GaAs second contact layer 114' having an etching rate faster than the etching rate of the In<SB>0.25</SB>Ga<SB>0.75</SB>As<SB>0.54</SB>P<SB>0.46</SB>etching decelerating layer 112' is formed on this In<SB>0.25</SB>Ga<SB>0.75</SB>As<SB>0.54</SB>P<SB>0.46</SB>etching decelerating layer 112'. COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006237131(A) |
申请公布日期 |
2006.09.07 |
| 申请号 |
JP20050047087 |
申请日期 |
2005.02.23 |
| 申请人 |
SHARP CORP |
发明人 |
HIRUKAWA SHUICHI;KISHIMOTO KATSUHIKO |
| 分类号 |
H01S5/22;H01L21/28 |
主分类号 |
H01S5/22 |
| 代理机构 |
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