FABRICATION PROCESS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which a semiconductor substrate is not subjected to considerable damage. SOLUTION: The process for fabricating a semiconductor device comprises steps of: isolating an element region from other region by forming an element isolation film 2 on a semiconductor substrate 1; forming a gate insulation film 3 on the semiconductor substrate 1 located in the element region; forming a first polysilicon film 41 introduced with impurities on the element isolation film 2 and the gate insulation film 3; forming a second polysilicon film 42 on the first polysilicon film 41; and forming a gate electrode 4 on the gate insulation film 3 by patterning the first polysilicon film 41 and the second polysilicon film 42. COPYRIGHT: (C)2006,JPO&NCIPI