| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrophotographic photoreceptor which has sufficiently high sensitivity to exposure using long wavelength light or short wavelength light, in which variation in the electric resistance of an intermediate layer is reduced even against the environmental change from a low temperature and low humidity to a high temperature and high humidity, in which the rise of a residual potential is reduced, and with which a stable quality image can be obtained even after the repeated use. SOLUTION: The electrophotographic photoreceptor has an intermediate layer constituted of a non-single crystalline silicon film composed of silicon prepared by including a hydrogen atom, an oxygen atom, and at least one of a hydrogen atom and halogen atom as a mother body between a support and an organic conductive layer and not doped with a phosphorus atom and boron atom, in which the content of the nitrogen atom in the intermediate layer is≥5 to≤50 atomic% with respect to the total of the silicon atom, the nitrogen atom, and oxygen atom in the intermediate layer, and the content of the oxygen atom in the intermediate layer is≥0.01 to≤10 atomic% with respect to the total of the silicon atom, nitrogen atom, and oxygen atom in the intermediate layer. COPYRIGHT: (C)2006,JPO&NCIPI
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