| 摘要 |
PROBLEM TO BE SOLVED: To provide a characteristic evaluation method for a semiconductor element capable of extracting precisely a SPICE parameter. SOLUTION: In this characteristic evaluation method for the semiconductor element, an insulation gate electric field effect type transistor 20 provided in a semiconductor layer is prepared to find current and voltage characteristics of the insulation gate electric field effect type transistor 20 (S10), and to find a current variation due to a self-specific heat effect of the insulation gate electric field effect type transistor 20 (S20). The current variation found in the S20 is added to the current and voltage characteristics found in the S10 to obtain the current and voltage characteristics of the insulation gate electric field effect type transistor 20 under the condition where no self-specific heat effect exists (S30). COPYRIGHT: (C)2006,JPO&NCIPI
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