| 摘要 |
A method of forming a mask pattern includes a step of laminating a first resist layer on a base layer, a step of exposing the first resist layer using a first pattern with a pattern of at least one via hole, a step of developing the first resist layer exposed to remove a part of the first resist layer, the part corresponding to an area of the at least one via hole, a step of laminating a second resist layer on the first resist layer and on the base layer in the area of the at least one via hole, a step of exposing the second resist layer using a second pattern, and a step of developing the second resist layer exposed and the first resist layer to remove a part of the second resist layer and all of the first resist layer so as to form the mask pattern made of the second resist layer. |
