发明名称 A semiconductor memory module and a multi-layer circuit bord for
摘要 A method and apparatus for implementing a selectively operable clock booster for DDR memory and other logic modules, which utilize partially-defective memory parts or a combination of partially-defective and flawless memory parts. The method and apparatus include an improved clocking method and system, which enables the use of partially-defective memory parts without distorting the clock signal. In one embodiment, a Phase-Locked Loop circuit and a clock patching network are used to significantly reduce clock distortion on a memory module.
申请公布号 EP1699056(A1) 申请公布日期 2006.09.06
申请号 EP20060115412 申请日期 2003.02.24
申请人 CELETRONIX INTERNATIONAL, LTD 发明人 PEDDLE, CHARLES, L.
分类号 G11C29/00;G11C5/06;H01L21/66;H01L23/00;H05K1/00;H05K1/18;H05K3/22 主分类号 G11C29/00
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