发明名称 Semiconductor register element
摘要 To provide a semiconductor register element being capable of reducing standby power consumption of a CMOS semiconductor integrated circuit. Upon shifting from a standby status to an operating status, firstly the application of input voltage is interrupted from elements other than temporary memory elements to the temporary memory elements. Next, the application of output voltage is interrupted from the temporary memory elements to the elements other than the temporary memory elements. Finally, the supply of source voltage is interrupted to the elements other than the temporary memory elements. In the steps of returning from a standby status to an operating status, firstly the supply of source voltage is resumed to the interrupted elements other than the temporary memory elements. Next, the application of output voltage is resumed from the temporary memory elements to the elements other than the temporary memory elements. Finally, the application of input voltage is resumed from the elements other than the temporary elements to the temporary memory elements.
申请公布号 EP1130778(A3) 申请公布日期 2006.09.06
申请号 EP20010105043 申请日期 2001.03.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAGUMO, KATSUMI
分类号 G11C7/00;G11C11/417;H03K3/037;H03K17/22;H03K19/00;H03K23/54 主分类号 G11C7/00
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