High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

摘要

A high voltage junction terminating structure comprising:
a first region (1);
an eighth region (8) of second conductivity type formed in a selected area of a first major surface of the first region (1), the eighth region (8) and the first region (1) forming a second pn junction therebetween; and
a ninth region (9) of first conductivity type formed in a selected area of a surface of the eighth region (8), the eighth region (8) and the ninth region (9) forming a third pn junction (112) therebetween;
wherein the eighth region (8) is formed such that a second depletion layer (113) appearing on both sides of the second pn junction (111) is combined with a third depletion layer (114) appearing on both sides of the third pn junction (112), and the ninth region (9) is formed such that the third depletion (114) layer reaches a surface (115) of the ninth region (9), when the second (111) and third (112) pn junctions are both reverse biased and wherein a portion of the eighth region (8) located beneath the ninth region (9) and between the first region (1) and the ninth region (9) has a net doping amount of from 1x10 11 cm -2 to 4x10 12 cm -2 , and the ninth region has a net doping amount of from 1x10 11 cm -2 to 2x10 12 cm- 2 .