发明名称 Minimizing adjacent wordline disturb in a memory device
摘要 A selected wordline that is coupled to cells for programming is biased with a programming voltage. The unselected wordlines that are adjacent to the selected wordline are biased at a first predetermined voltage. The remaining wordlines are biased at a second predetermined voltage that is greater than the first predetermined voltage. The first predetermined voltage is selected by determining what unselected, adjacent wordline bias voltage produces a minimized V<SUB>pass </SUB>disturb in response to the selected wordline programming voltage.
申请公布号 US2006198222(A1) 申请公布日期 2006.09.07
申请号 US20060417575 申请日期 2006.05.04
申请人 MICRON TECHNOLOGY, INC. 发明人 RUDECK PAUL J.;MIHNEA ANDREI;BICKSLER ANDREW
分类号 G11C7/02 主分类号 G11C7/02
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