GROUP-III NITRIDE SEMICONDUCTOR DEVICE

摘要

An object of the present invention is to provide a Group III nitride semiconductor element which comprises a thick AlGaN layer exhibiting high crystallinity and containing no cracks, and which does not include a thick GaN layer (which generally serves as a light-absorbing layer in an ultraviolet LED). The inventive Group III nitride semiconductor element comprises a substrate; a first nitride semiconductor layer composed of AlN which is provided on the substrate; a second nitride semiconductor layer composed of Alx1Ga1-x1N (0 (x1 (0.1) which is provided on the first nitride semiconductor layer; and a third nitride semiconductor layer composed of Alx2Ga1-x2N (0 < x2 < 1 and x1 + 0.02 (x2) which is provided on the second nitride semiconductor layer.