发明名称 Method for manufacturing Group-III nitride compound semiconductor device
摘要 After a p-seat electrode-forming layer is laminated onto a light-transmissive electrode-forming layer, a first heating step and a second heating step are carried out for alloying the two layers. In the first heating step, heat treatment is performed at a relatively low temperature in an atmosphere containing oxygen. In the second heating step, heat treatment is performed at a relatively high temperature in an atmosphere not containing oxygen.
申请公布号 US7101780(B2) 申请公布日期 2006.09.05
申请号 US20030479485 申请日期 2003.12.03
申请人 TOYODA GOSEI CO., LTD. 发明人 UEMURA TOSHIYA
分类号 H01L21/28;H01L21/285;H01L21/44;H01L33/06;H01L33/32;H01L33/42 主分类号 H01L21/28
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