发明名称 Image reading device with reduced variations among signal levels
摘要 In an image reading device having a plurality of photoelectric conversion elements formed in one or more rows on an IC chip and a conductor layer having openings formed therein for limiting light striking the photoelectric conversion elements, a conductor having substantially the same width as the conductor layer is formed in the area extending from the photoelectric conversion element located at each end of the IC chip to the chip edge. This arrangement helps make light shield conditions nearly equal for the photoelectric conversion element located at an end of the IC chip and for the other photoelectric conversion elements.
申请公布号 US7102678(B2) 申请公布日期 2006.09.05
申请号 US20010971054 申请日期 2001.10.05
申请人 ROHM CO., LTD. 发明人 TAMAGAWA TOSHIMITSU
分类号 H04N1/028;H04N5/335;H01L27/146;H01L31/00;H01L31/0232 主分类号 H04N1/028
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