| 摘要 |
Provided is directed to a high voltage generation circuit capable of improving a yield by controlling a defect due to a write recovery time tWR margin shortage, by including: a first high voltage generation unit for generating a first high voltage during an active operation and then applying it to a cell word line; and a second high voltage generation circuit for generating a predetermined voltage during a precharging operation, and then applying a second high voltage higher than the first high voltage to the cell word line.
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