Method of fabricating semiconductor devices with replacement, coaxial gate structure

摘要

A method is described for providing a nanostructure suspended above a substrate surface. The method includes providing a nanostructure encased in an oxide shell on a substrate and depositing a sacrificial material and a support material over the oxide encased nanostructure. Then, the sacrificial material is removed to expose the oxide encased nanostructure. Once the oxide encased nanostructure has been exposed, the oxide shell is removed from the oxide encased nanostructure such that the nanostructure is suspended above the substrate surface.