发明名称 |
Methods for fabricating nonvolatile memory devices |
摘要 |
Methods of fabricating nonvolatile memory devices are disclosed. A disclosed method comprises forming a trench isolation layer on a substrate; forming an oxide layer and a polysilicon layer; forming a sacrificial layer on the polysilicon layer; forming a photoresist pattern on the sacrificial layer; performing an etching process using the photoresist pattern as a mask and, at the same time, attaching polymers on sidewalls of the etched sacrificial layer to form polymer layers, the polymers being generated from the etching of the sacrificial layer; and forming a floating gate and a tunnel oxide by removing part of the polysilicon layer and the oxide layer using the polymer layers and the photoresist pattern as a mask. The disclosed method can increase the width of a floating gate by using polymer layers in fabricating a two-bit type cell, thereby ensuring a higher coupling ratio compared to the coupling ratio of a conventional two-bit type cell.
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申请公布号 |
US7101759(B2) |
申请公布日期 |
2006.09.05 |
申请号 |
US20030750252 |
申请日期 |
2003.12.31 |
申请人 |
DONGBU ELECTRONICS, CO., LTD |
发明人 |
HAN CHANG HUN |
分类号 |
H01L21/8247;H01L21/033;H01L21/3213;H01L21/4763;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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