发明名称 |
Manufacturing method of semiconductor device |
摘要 |
A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.
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申请公布号 |
US7101735(B2) |
申请公布日期 |
2006.09.05 |
申请号 |
US20030696581 |
申请日期 |
2003.10.30 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
NOMA TAKASHI;SHINOGI HIROYUKI;SUZUKI AKIRA;SEKI YOSHINORI;KUHARA KOICHI;TAKAO YUKIHIRO;YAMADA HIROSHI |
分类号 |
H01L21/44;H01L21/68;H01L21/768;H01L23/31;H01L23/48;H01L23/485 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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