发明名称 Semiconductor memory device driven with low voltage
摘要 Independent power supply systems are provided for a peripheral circuit other than a column decoder, an array-relevant circuit, and a column decoder respectively, so that a peripheral power supply voltage, an array power supply voltage, and a column decoder power supply voltage generated independently of each other are supplied to the peripheral circuit, the array-relevant circuit, and the column decoder as an operating power supply voltage, respectively. Preferably, the column decoder power supply voltage during normal operation is set as an intermediate voltage between the peripheral power supply voltage and the array power supply voltage. Thus, an array configuration suitable for driving a transistor with a low voltage in order to achieve lower power consumption can be obtained.
申请公布号 US7102935(B2) 申请公布日期 2006.09.05
申请号 US20040972537 申请日期 2004.10.26
申请人 RENESAS TECHNOLOGY CORP. 发明人 MIKI TAKEO;TSUKIKAWA YASUHIKO;TANAKA SHINJI
分类号 G11C5/14;H01L21/8242;G11C5/00;G11C7/00;G11C7/06;G11C7/08;G11C7/12;G11C8/00;G11C11/401;G11C11/407;G11C11/4074;G11C11/409;H01L27/108 主分类号 G11C5/14
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