发明名称 Boosting circuit
摘要 A boosting circuit is disclosed. The boosting circuit includes an input circuit part for outputting a differential current proportional to input voltages; a bias circuit part for mirroring the differential current, and producing an inverted differential current that the differential current is inverted; and an output circuit part for adjusting magnitudes of the differential current and the inverted differential current based on a predetermined ratio of MOS transistors, respectively, adding the adjusted differential current and inverted differential current, and producing an output current in a push-pull form. Accordingly, the boosting circuit has a broad maximum differentiable frequency bandwidth, and facilitates the adjustments of differentiation characteristics of an output current. Further, an amount of output current of differentiation form is not affected by external factors such as voltages, processes, temperatures, and so on.
申请公布号 US7102433(B2) 申请公布日期 2006.09.05
申请号 US20040751469 申请日期 2004.01.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JEONG-WON;MOON JAE-JUN;CHANG SOO-JUNG
分类号 H03F1/30;H03F3/45;G11B20/10;H03F3/08;H03F3/30;H03K5/24 主分类号 H03F1/30
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