Magnetic semiconductor material and method for preparation thereof

摘要

A magnetic semiconductor material having magnetization characteristics and a method for preparing the same is provided. In the method for preparing the magnetic semiconductor, Mn is vapor-deposited at a thickness of 200 to 300 Å onto a CdGeP₂ single crystal ( 2 ) while the CdGeP₂ single crystal ( 2 ) is maintained at a temperature of about 390° C. in a molecular beam epitaxy apparatus ( 1 ). The Mn-deposited CdGeP₂ single crystal is heated at a temperature of about 510° C. for 1 hour. Thus, a magnetic semiconductor comprising CdMnGeP₂ and having magnetization characteristics at room temperature is prepared.