发明名称 |
System and method for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition |
摘要 |
A system and method is disclosed for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition. A via in a semiconductor device is formed by placing a metal layer on a substrate and placing a layer of anti-reflective coating (ARC) titanium nitride (TiN) over the metal layer. A layer of dielectric material is placed over the ARC TiN layer and a via passage is etched through the dielectric and partially through the ARC TiN layer. A titanium layer is then deposited and subjected to a nitrogen plasma process. The nitrogen plasma converts the titanium layer to a first layer of titanium nitride. The first layer of titanium nitride does not react with fluorine to form a high resistance compound. Therefore the electrical resistance of the first layer of titanium nitride does not significantly increase during subsequent thermal cycles.
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申请公布号 |
US7101787(B1) |
申请公布日期 |
2006.09.05 |
申请号 |
US20040821491 |
申请日期 |
2004.04.09 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
DRIZLIKH SERGEI;FRANCIS THOMAS JOHN |
分类号 |
H01L21/4763;C07K16/28;C12Q1/70;G01N33/53 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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