| 发明名称 |
METHOD FOR FORMING TI FILM AND TIN FILM, CONTACT STRUCTURE, COMPUTER READABLE STORING MEDIUM AND COMPUTER PROGRAM |
| 摘要 |
After cleaning the surface of a base nickel silicide film, a Ti film having a thickness of 2nm or more but less than 10nm is formed by CVD using a Ti compound gas. The Ti film is nitrided, and on the Ti film after nitriding, a TiN film is formed by CVD by using the Ti compound gas and a gas including N and H.
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| 申请公布号 |
KR20060096036(A) |
申请公布日期 |
2006.09.05 |
| 申请号 |
KR20067007190 |
申请日期 |
2006.04.14 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TADA KUNIHIRO;NARUSHIMA KENSAKU;WAKABAYASHI SATOSHI |
| 分类号 |
H01L21/20;C23C16/02;C23C16/14;C23C16/34;H01L21/02;H01L21/28;H01L21/285;H01L21/3205;H01L21/768 |
主分类号 |
H01L21/20 |
| 代理机构 |
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