发明名称 Capacitor with aluminum oxide and lanthanum oxide containing dielectric structure and fabrication method thereof
摘要 Disclosed is a capacitor with a dielectric structure having an aluminum oxide layer and a lanthanum oxide layer and a fabrication method thereof. The capacitor includes: a lower electrode; a first dielectric layer with a high energy band gap formed on the lower electrode; a second dielectric layer formed on the first dielectric layer, the second dielectric layer with a high dielectric constant, wherein an energy band gap of the second dielectric layer is lower than the energy band gap of the first dielectric layer; and an upper electrode formed on the second dielectric layer.
申请公布号 US7102875(B2) 申请公布日期 2006.09.05
申请号 US20040880372 申请日期 2004.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE KEE-JEUNG;KWON HONG
分类号 H01G4/06;H01G4/10;H01G4/20;H01G4/228;H01L21/02;H01L21/316;H01L21/8242 主分类号 H01G4/06
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