| 发明名称 |
Method for forming a dielectric layer and related devices |
| 摘要 |
A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.
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| 申请公布号 |
US7101811(B2) |
申请公布日期 |
2006.09.05 |
| 申请号 |
US20030435239 |
申请日期 |
2003.05.08 |
| 申请人 |
INTEL CORPORATION |
发明人 |
KUSE RONALD JOHN;YASUDA TETSUJI |
| 分类号 |
H01L21/31;H01L21/316;H01L21/28;H01L21/318;H01L29/51 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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