发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, SEMICONDUCTOR MODULE AND A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 SEMICONDUCTOR DEVICES, SEMICONDUCTOR WAFERS, AND REMICONDUCTOR MODULES ARE PROVIDED: WHEREIN THE SEMICONDUCTOR DEVICE HAS A SMALL WARP; DAMAGES AT CHIP EDGE AND CRACKS IN A DROPPING TEST ARE SCARCELY GENERATED; AND THE SEMICONDUCTOR DEVICE IS SUPERIOR IN MOUNTING RELIABILITY AND MASS PRODUCIBILITY. THE SEMICONDUCTOR DEVICE 17 COMPRISING: A SEMICONDUCTOR CHIP 64; A POROUS STRESS RELAXING LAYER 3 PROVIDED ON THE PLANE, WHEREON CIRCUITS AND ELECTRODES ARE FORMED, OF THE SEMICONDUCTOR CHIP; A CIRCUIT LAYER 2 PROVIDED ON THE STRESS RELAXING LAYER AND CONNECTED TO THE ELECTRODES; AND EXTERNAL TERMINALS 10 PROVIDED ON THE CIRCUIT LAYER; WHEREIN AN ORGANIC PROTECTING FILM 7 IS FORMED ON THE PLANE, OPPOSITE TO THE STRESS RELAXING LAYER, OF THE SEMICONDUCTOR CHIP, AND RESPECTIVE SIDE PLANES OF. THE STRESS RELAXING LAYER, THE SEMICONDUCTOR CHIP 6, AND THE PROTECTING FILM 7 ARE EXPOSED OUTSIDE ON A SAME PLANE.(FIG. 1)
申请公布号 MY125437(A) 申请公布日期 2006.08.30
申请号 MY1999PI04556 申请日期 1999.10.21
申请人 HITACHI, LTD. 发明人 MASAHIKO OGINO;ASAO NISHIMURA;ICHIRO ANJOH;TAKUMI UENO;SYUJI EGUCHI;AKIRA NAGAI;TOSHIYA SATOH;TOSHIAKI ISHII;HIROYOSHI KOKAKU;MASANORI SEGAWA;NOBUTAKE TSUYUNO
分类号 H01L21/60;H01L23/12;H01L21/301;H01L21/46;H01L21/48;H01L21/50;H01L23/28;H01L23/31;H01L23/50;H01L23/52;H01L29/40 主分类号 H01L21/60
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