| 摘要 |
<p>In an electron emission device and its method of fabrication, a plurality of holes (211) are smoothly formed within a limited region, and an ohmic layer (207) connected to a signal line (204) is formed using some of the plurality of holes. The electron emission device includes: a substrate (201); a first electrode (203) arranged on the substrate; a first insulating layer (205) arranged on the first electrode and having a plurality of first holes (211); an ohmic layer (207) arranged in at least one of the plurality of first holes and electrically connected to the first electrode; a signal line (204) electrically connected to the ohmic layer and adapted to supply a voltage to the first electrode via the ohmic layer; an emitter arranged (215) in the plurality of first holes excluding the at least one hole having the ohmic layer arranged therein and electrically connected to the first electrode; and a second electrode (213) arranged on the first insulating layer and having a plurality of gate holes corresponding to the plurality of first holes excluding the at least one hole having the ohmic layer arranged therein.</p> |
