ENHANCEMENT OF AN INTERCONNECT

摘要

A METHOD , APPARATUS , SYSTEM, AND MACHINE-READABLE MEDIUM FOR AN INTERCONNECT STRUCTURE IN A SEMICONDUCTOR DEVICE AND ITS METHOD OF FORMATION IS DISCLOSED. EMBODIMENTS COMPRISE A CARBON-DOPED AND SILICON-DOPED INTERCONNECT HAVING A CONCENTRATION OF SILICON TO AVOID TO FORMING A COPPER SILICIDE LAYER BETWEEN AN INTERCONNECT AND A PASSIVATION LAYER. SOME EMBODIMENTS PROVIDE UNEXPECTED RESULTS IN ELECTROMIGRATION RELIABILITY IN REGARDS TO ACTIVATION ENERGY AND/OR MEAN TIME TO FAILURE.