| 摘要 |
A piezoelectric ultrasonic transducer array is formed by producing one or more trenches in a silicon wafer 20, and then fusion bonding a silicon layer 25 over the trenches, thereby forming back cavities 26. The silicon layer 25 acts as a diaphragm, and is provided with a piezoelectric layer 22 and electrode layers 21, 23 sandwiching it, so that deflection of the diaphragm can be produced by, or conversely produces, electrical signals in the electrodes 21, 23 . The silicon diaphragm layer 25 is moved onto the silicon wafer as a part of an SOI structure. The SOI further includes a handle wafer which is removed once the diaphragm layer 25 is bonded to the wafer.
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